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Please use this identifier to cite or link to this item: http://elib.bsu.by/handle/123456789/20687
Title: Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis
Authors: Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunetz, B. S.
Wesch, W.
Wendler, E.
Karwat, C.
Issue Date: 2011
Citation: Acta physica polonica A. - 2011. - № 1. - С. 87-90.
Abstract: We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence “hot” implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/ transmission electron di˙raction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900 ±C up to 20–90 nm in those annealed at 1100 ±C. For the samples annealed at 900 ±C a broad band in the region of 0.75–1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.
URI: http://elib.bsu.by/handle/123456789/20687
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