Please use this identifier to cite or link to this item:
|Title:||Structure and Optical Properties of Silicon Layers with GaSb Nanocrystals Created by Ion-Beam Synthesis|
Dunetz, B. S.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Citation:||Acta physica polonica A. - 2011. - № 1. - С. 87-90.|
|Abstract:||We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-ﬂuence “hot” implantation of Sb and Ga ions followed by thermal annealing. The Rutherford backscattering, transmission electron microscopy/ transmission electron di˙raction, Raman spectroscopy and photoluminescence were used to characterize the implanted layers. It was found that the nanocrystal size increases from 5 to 60 nm in the samples annealed at 900 ±C up to 20–90 nm in those annealed at 1100 ±C. For the samples annealed at 900 ±C a broad band in the region of 0.75–1.05 eV is registered in the photoluminescence spectra. The nature of this photoluminescence band is discussed.|
|Appears in Collections:||Статьи сотрудников НИИ ПФП|
Files in This Item:
|Structure and Optical Properties of Silicon Layers with GaSb.pdf||843,91 kB||Adobe PDF||View/Open|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.