Logo BSU

Please use this identifier to cite or link to this item: http://elib.bsu.by/handle/123456789/20686
Title: Structure and optical properties of silicon layers with GaSb nanocrystals created by ion-beam synthesis
Authors: Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Dunets, B.
Wesch, W.
Wendler, E.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2012
Citation: Physica Status Solidi A. - 2012. - № 1. - С. 148-152.
Abstract: We have studied the ion-beam synthesis of GaSb nanocrystals in Si by high-fluence implantation of Sb and Ga ions followed by thermal annealing. RBS, TEM/TED, RS, and photoluminescence (PL) were employed to characterize the implanted layers. It was found that the nanocrystals size increases from 5 to 60 nm in the samples annealed at 900 8Cup to 20–90 nm in the samples annealed at 1100 8C. An existence of significant mechanical stresses within implanted layers has been detected. The stress values have been calculated from the shift of the Si first order Raman band. For the samples annealed at 900 8C a broad band in the spectral region of about 0.75–1.05 eV is detected in the PL spectra. The nature of this PL band is discussed.
URI: http://elib.bsu.by/handle/123456789/20686
Appears in Collections:Статьи сотрудников НИИ ПФП

Files in This Item:
File Description SizeFormat 
pssa_201127060_paginated_offprint.pdf3,08 MBAdobe PDFView/Open


PlumX

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.