Электрический эффект в магнитосопротивлении арсенида галлия

Abstract

The influence of electric field on the magnetoresistance of n-type epitaxial gallium arsenide with free electrons concentration ne= 1,2x1017 cm-3 in the temperature range 1,5-300 K has been studied in the magnetic field up to 1,5 T. Positive magnetoresistance increases with increasing electric field at 300 and 77 K due to heating of electron gas by the electric field and redistribution of charge carriers between valleys. In spite of the fact that impurity and conduction bands are coincided in the investigated samples, the transition from negative to positive magnetoresistance is found to occur at low temperature because of the sample heating by the current.