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|Title:||Threshold and criterion for ion track etching in SiO2layers grown on Si|
|Authors:||Vlasukova, L. A.|
Komarov, F. F.
Yuvchenko, V. N.
Didyk, A. Yu.
Skuratov, V. A.
Kislitsin, S. B.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Publisher:||Elsevier Science Publishing Company, Inc.|
|Citation:||Vacuum. - 2014. - Vol. 105. - Pp. 107-110.|
|Abstract:||SiO2layers thermally grown on Si wafers were irradiated with swift heavy ions in the energy range of (20 e710) MeV. Subsequent chemical etching in 4% HF for 6 min produced conical pores with diameters from w20 to w80 nm in the SiO2layers. We have calculated radii and lifetime of the molten regions in the SiO2 layers and compared them with the pore diameters and diameter dispersions estimated from scanning electron microscopy and atomic force microscopy. It is shown that the existence of a molten region and its radius can serve as a valid criterion for track “etchability”. In the same etching conditions the etched track diameter and the etching velocity in the track region are proportional to the radius and the lifetime of the molten region|
|Appears in Collections:||Статьи сотрудников НИИ ПФП|
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