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dc.contributor.authorArellano, Cristina-
dc.contributor.authorMingaleev, Sergei-
dc.contributor.authorNovitsky, Andrey V.-
dc.contributor.authorKoltchanov, Igor-
dc.contributor.authorRichter, André-
dc.identifier.citationSPIE-OSA-IEEE Vol. 7631 76310K-1ru
dc.description.abstractWe present the benefits and limitations for designing complex optical semiconductor-based integrated structures by means of advanced numerical modeling. Multi-section tunable laser designs are presented and their tuning properties are analyzed for different architectures. We introduce a model of an integrated SOA with electroabsorption modulator. Its spectral properties are analyzed function of the parameters of the absorber section, showing the influence on the extinction ration of the generated signal. An InP-type Mach-Zehnder modulator is designed, illustrating the models of Kerr, Frank-Keldysh and QCSE effects. An example of a photo-detector demonstrates how dimensions and absorption parameters can be optimized to increase its detection bandwidth.ru
dc.publisherDesign of Complex Semiconductor Integrated Structuresru
dc.titleDesign of Complex Semiconductor Integrated Structuresru
Appears in Collections:Кафедра теоретической физики и астрофизики

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