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|Title:||Nonlinear gain and bistability in photonic crystal heterostructures with compositional and doping superlattices|
|Authors:||Kononenko, V. K.|
Ushakov, D. V.
|Keywords:||ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника|
|Publisher:||International Society for Optical Engineering; 1999|
|Citation:||Proceedings of SPIE, the International Society for Optical Engineering. 2005. - Vol. 5950|
|Abstract:||Optical properties of photonic crystal heterostructures with embedded n–i–p–i superlattices are studied. Nonlinear behavior of the transmission and reflection spectra near the defect mode is investigated. Self-consistent calculations of the output performance characteristics are performed using the transfer-matrix method and taking into account the gain saturation. Features and characteristic parameters of the nonlinear gain in active n–i–p–i layers are determined. Detail analysis of the gain saturation and accompanying nonlinear refraction effects is carried out for one-dimensional photonic crystal heterostructure amplifiers in the GaAs–GaInP system having at the central part an active “defect” from the doubled GaAs n-i-p-i crystal. The gain saturation in the active layers in the vicinity of the defect changes the index contrast of the photonic structure and makes worse the emission at the defect mode. Spectral bistability effect which can be exhibited in photonic crystal heterostructure amplifiers is predicted and the hysteresis loop and other attending phenomena are described. The bistability behavior and modulation response efficiency demonstrate the potential possibilities of the photonic crystal heterostructures with n-i-p-i layers as high-speed optical amplifiers and switches.|
|Appears in Collections:||Статьи факультета радиофизики и компьютерных технологий|
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