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Please use this identifier to cite or link to this item: http://elib.bsu.by/handle/123456789/12585
Title: Calculation of energy characteristics for Si1-xGex-Si strucrures with single quantum wells
Authors: Ushakov, D. V.
Kononenko, V. K.
Issue Date: 2011
Publisher: Springer Science+Business Media, Inc.
Citation: Journal of Applied Spectroscopy. - 2011. - Vol. 78, No. 1, March. - P. 59-68
Abstract: Energy characteristics of Si1–xGex–Si quantum-size structures with single quantum wells were calculated numerically based on a four-band k⋅p method. Analytical expressions for the Luttinger parameters are obtained as functions of the component composition of Si1–xGex compounds. Analytical expressions for the energy h−ω of optical band-to-band transitions are obtained in an effective mass approximation and agree well with numerical calculations by the k⋅p method. This allows one to determine accurately a range of changes while varying the component compositions and thickness of the active and barrier layers.
URI: http://elib.bsu.by/handle/123456789/12585
Appears in Collections:Статьи факультета радиофизики и компьютерных технологий

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