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|Title:||Calculation of energy characteristics for Si1-xGex-Si strucrures with single quantum wells|
|Authors:||Ushakov, D. V.|
Kononenko, V. K.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Publisher:||Springer Science+Business Media, Inc.|
|Citation:||Journal of Applied Spectroscopy. - 2011. - Vol. 78, No. 1, March. - P. 59-68|
|Abstract:||Energy characteristics of Si1–xGex–Si quantum-size structures with single quantum wells were calculated numerically based on a four-band k⋅p method. Analytical expressions for the Luttinger parameters are obtained as functions of the component composition of Si1–xGex compounds. Analytical expressions for the energy h−ω of optical band-to-band transitions are obtained in an effective mass approximation and agree well with numerical calculations by the k⋅p method. This allows one to determine accurately a range of changes while varying the component compositions and thickness of the active and barrier layers.|
|Appears in Collections:||Статьи факультета радиофизики и компьютерных технологий|
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