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dc.contributor.authorBatalov, R. I.-
dc.contributor.authorBayazitov, R. M.-
dc.contributor.authorNurutdinov, R. M.-
dc.contributor.authorKryzhkov, D. I.-
dc.contributor.authorGaiduk, P. I.-
dc.contributor.authorMarques, C. P.-
dc.contributor.authorAlves, E.-
dc.date.accessioned2012-05-25T08:09:20Z-
dc.date.available2012-05-25T08:09:20Z-
dc.date.issued2009-
dc.identifier.citationJournal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. Vol. 3. - 2009. - No. 4. - pp. 604–607.-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/10018-
dc.description.abstractAbstract—The formation of thin-film solid solutions of erbium in silicon and synthesis of erbium silicides were performed using continuous implantation of silicon with erbium ions followed by pulsed ion-beam treat- ment. Structural and optical properties of formed Si:Er layers were studied by Rutherford backscattering, trans- mission electron microscopy, and low-temperature photoluminescence. The dependences of erbium redistribu- tion, the microstructure of Si:Er layers, and their photoluminescence in the near-IR region on the erbium con- centration and pulsed treatment conditions were determined.ru
dc.language.isoenru
dc.publisherPleiades Publishing, Ltd.ru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleFeatures of the Pulsed Treatment of Silicon Layers Implanted with Erbium Ionsru
Appears in Collections:Статьи факультета радиофизики и компьютерных технологий

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