Phase transitions in erbium-doped silicon exposed to laser radiation

Abstract

The dynamics of phase transitions induced by nanopulsed ruby laser radiation (80 nsec, 2 J/cm2 ) both in silicon layers doped with erbium ions and in those containing doped erbium and oxygen have been studied by an optical probing method. It is shown that the reflectivity behavior of structures under pulsed irradiation is governed by phase transitions (melting and rystallization) of implanted silicon and also by interference effects at the interfaces of the resulting phases. It is established that the profiles of erbium distribution change under nanosecond laser irradiation and that the dopant is forced out to the surface due to a segregation effect at small implantation doses. As the implanatation dose increases, diffusion deep into the sample tends to prevail over segregation. A considerable increase in the photoluminescence peak intensity at 0.81 eV is found after both the pulsed laser processing and thermal post-annealing of doped samples as opposed to spectra of samples subjected either to thermal annealing or to pulsed laser irradiation.